Analysis of static characteristics of a bipolar-mode SIT (BSIT)

1 August 1982

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices

Vol. 29 (8) , 1233-1244
https://doi.org/10.1109/t-ed.1982.20862

Abstract

The three-dimensional effect of the potential profile in the channel of a bipolar-mode SIT (BSIT) is analytically discussed by using a very simple model. The basic performance of a BSIT is fundamentally determined by the potential barrier height at the intrinsic gate at the turn-off state, so that the effect of various structure parameters on the barrier height is discussed in detail to introduce the design rule of a BSIT. The operational principle of a BSIT is studied by using the two-dimensional numerical analysis, concentrating on the effect of geometrical parameter and impurity concentration on the potential distribution, electron, and hole density in the channel, as well as terminal characteristics.

Keywords

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