Epitaxial growth of fcc clusters
- 15 April 1995
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 51 (16) , 11039-11042
- https://doi.org/10.1103/physrevb.51.11039
Abstract
The statistics of epitaxially grown free fcc clusters is studied in a simple growth model, where the clusters have only (111) surfaces, and only one facet grows at a time. The abundance spectrum shows regular oscillations as a function of and as a function of . The former corresponds to octahedral growth pattern, although only an insignificant number of the clusters are perfect octahedra. The latter is a result of the differences in the facet sizes of imperfect octahedra.
Keywords
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