MBE Growth of High-Quality GaAs Using Triethylgallium as a Gallium Source
- 1 January 1986
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 25 (1A) , L52
- https://doi.org/10.1143/jjap.25.l52
Abstract
High-quality GaAs was grown by gas source MBE using TEGa (triethylgallium) and metal arsenic. An unintentionally doped GaAs layer (6.5 µm thick) exhibited p-type conduction with the carrier concentration as low as 8×1014 cm-3 (room temperature) and highest hole mobility of 5930 cm2/Vs (39 K). The carrier concentration in GaAs obtained is the lowest ever reported for GaAs grown by gas source MBE or MO–MBE.Keywords
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