Film Properties of CVD Titanium Nitride Deposited with Organometallic Precursors at Low Pressure Using Inert Gases, Ammonia, or Remote Activation

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Abstract
Chemical vapor deposited layers are required as interdiffusion barriers for the fabrication of microelectronic devices. The deposition of from a metallorganic precursor, tetrakis‐(dimethylamido)‐titanium (IV), has been investigated and compared using three different experimental approaches: the thermal decomposition of the precursor, its thermal reaction with ammonia, and its reaction with mixtures which have been activated in a remote microwave plasma (2.46 GHz). The experiments have been carried out at moderate temperatures of 250–500°C and pressures between 0.5 and 5 Torr. Mass spectrometric analysis of the effluent gases have been performed and reaction mechanisms for the different experimental conditions are postulated based on these investigations. The application of remote plasma activated mixtures instead of ammonia is a major breakthrough in controlling the reactivity of the chemical partners and is proposed to be also used during formation from .

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