Measurements of refractive-index variation with free carrier density and temperature for 1.6 μm GaInAsP/InP lasers

6 November 1980

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 16 (23) , 895-896
https://doi.org/10.1049/el:19800638

Abstract

The refractive-index variation with injected carrier density and temperature was measured for GaInAsP/InP b.h. lasers emitting at 1.6 μm. Values of dn/dN = −5.9 × 10⁻²⁷ m³ and dn/dT = 3 × 10⁻⁴/°C resulted. The investigation was based on measurements of the wavelength shift of individual longitudinal modes in the spectra of the lasers.

Keywords

BURIED HETEROSTRUCTURE LASER
TEMPERATURE DEPENDENCE
1.6 MICRONS
INJECTED CARRIER DENSITY
REFRACTIVE INDEX VARIATION
WAVELENGTH SHIFT
LONGITUDINAL MODES
GAINASP/INP LASERS

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