High frequency switching of power MOSFETs
- 1 July 1988
- journal article
- research article
- Published by Taylor & Francis in International Journal of Electronics
- Vol. 65 (1) , 127-138
- https://doi.org/10.1080/00207218808945211
Abstract
The effect of the source terminal parasitic inductance on the switching performance of power MOSFETs has been investigated. Results are given of the improvement in switching times produced when an IRF450 in a T03 package is modified to include a second source lead for drive purposes.Keywords
This publication has 4 references indexed in Scilit:
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- Class E switching-mode power amplifier for high-frequency electric process heating applicationsElectronics Letters, 1987