Epitaxial YBa2Cu3Ox thin films on sapphire with a PrBa2Cu3Ox buffer layer
- 1 March 1992
- journal article
- research article
- Published by AIP Publishing in Journal of Applied Physics
- Vol. 71 (5) , 2333-2337
- https://doi.org/10.1063/1.351086
Abstract
Highly c‐axis‐oriented YBa2Cu3Ox thin films have been grown on (11̄02) sapphire substrates by a modified off‐axis magnetron rf‐sputtering technique. To prevent the interaction and to improve the lattice match between film and substrate a thin layer of 10–60 nm of PrBa2Cu3Ox was used as a buffer layer. The diffusion process was effectively blocked and the epitaxy was enhanced. The Jc (77 K) has been measured to be 4×105 A/cm2 which is significantly higher than the Jc of films directly grown on Al2O3 (∼8×104 A/cm2). The surface resistance of such films at 11 GHz and 4.2 K was measured to be 80 μΩ for 50‐nm thin films. These results are comparable to the best results reported so far on sapphire with other buffer layers.This publication has 13 references indexed in Scilit:
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