Effect of resist patterning on gate oxide integrity in source/drain implant
- 1 January 1985
- journal article
- Published by Elsevier in Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
- Vol. 6 (1-2) , 376-381
- https://doi.org/10.1016/0168-583x(85)90660-3
Abstract
No abstract availableKeywords
This publication has 2 references indexed in Scilit:
- Experimental Determination of Current Paths of Ions Implanted into InsulatorsJapanese Journal of Applied Physics, 1976
- Dielectric Breakdown in Silicon Dioxide Films on SiliconJournal of the Electrochemical Society, 1972