Binding energies of charged impurity centres in narrow gap materials with large lattice polarizability
- 6 April 2008
- book chapter
- Published by Springer Nature
- p. 468-472
- https://doi.org/10.1007/3-540-11191-3_83
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Electronic polarization (relaxation) effects in the core level spectra of semiconductors. I. General theory of electronic polarization (relaxation) in semiconductorsPhysica Status Solidi (b), 1979
- The electronic structure of impurities and other point defects in semiconductorsReviews of Modern Physics, 1978
- Effective Electron and Hole Interactions in a Polarizable Field;Physical Review Letters, 1970