Subnanosecond carriers lifetime measurement in 1.3μ InGaAsP
- 31 December 1984
- journal article
- Published by Elsevier in Journal of Luminescence
- Vol. 31-32, 500-502
- https://doi.org/10.1016/0022-2313(84)90340-5
Abstract
No abstract availableKeywords
This publication has 3 references indexed in Scilit:
- Nonlinear carrier dynamics in GaxIn1−xAsyP1−y compoundsApplied Physics Letters, 1984
- Effect of anisotropic band parameters on band-to-band Auger recombination inPhysical Review B, 1984
- Photoexcited carrier lifetime and Auger recombination in 1.3-μm InGaAsPApplied Physics Letters, 1983