Temperature-Dependent Cyclotron Mass of Inversion-Layer Electrons in Si
- 13 October 1975
- journal article
- Published by American Physical Society (APS) in Physical Review Letters
- Vol. 35 (15) , 1019-1022
- https://doi.org/10.1103/physrevlett.35.1019
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
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- Self-Consistent Results for-Type Si Inversion LayersPhysical Review B, 1972
- Electron mobility in a semiconductor inversion layer: Possible contribution from bulk phononsSurface Science, 1971
- Electrons and “SURFONS” in a semiconductor inversion layerSurface Science, 1971
- Cyclotron resonance of electrons in silicon at temperatures up to 200 KProceedings of the Physical Society, 1966