Mechanism of Charge Transport and Light Emission in ZnSexTe1−x p-n Junctions

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Abstract
Electrical transport, photoconductivity, and luminescence measurements have been performed on high‐resistivity p‐ and n‐type ZnSexTe1−x crystals. p‐n junction diodes prepared from such material, when cooled from 300° to 80°K in the dark, pass very little current and will not emit light. A momentary illumination with radiation of hν>1.9 eV will initiate a steady, efficient light emission, and produce an increase in current by a factor of about 1010. The experimental data obtained will be used to propose a mechanism for the charge transport and light emission in ZnSexTe1−x p‐n junctions which involves a self‐induced photoconductivity process in both the p‐ and the n‐type bulk of the diodes.