Effect of Zn on the electro-optical characteristicsof metalorganicchemical vapour deposition grown 1.3 µm InGaAsP/InP lasers
- 28 March 1996
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 32 (7) , 661-662
- https://doi.org/10.1049/el:19960423
Abstract
The diffusion behaviour of Zn during MOCVD of InGaAsP/InP capped mesa buried heterostructure lasers has been reported to exhibit a threshold concentration for significant diffusion, which can result in Zn in the active region. The authors report on the electro-optical characteristics of these lasers and show the effect of Zn in the active region on the threshold current and differential quantum efficiency.Keywords
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