New insight into the structure and growth of CaF2/Si(111)

27 April 1992

journal article
research article
Published by AIP Publishing in Applied Physics Letters

Vol. 60 (17) , 2071-2073
https://doi.org/10.1063/1.107092

Abstract

We have used transmission electron microscopy and x‐ray crystal truncation rod measurements to investigate thin (2 films grown on Si(111) substrates by molecular beam epitaxy. The results indicate that CaF₂/Si can be structurally as perfect as NiSi₂/Si and CoSi₂/Si, and that a reconstructed layer is present at the CaF₂/Si(111) interface.

Keywords

This publication has 16 references indexed in Scilit:

Fluoride/semiconductor and semiconductor/fluoride/semiconductor heteroepitaxial structure research: A review
Thin Solid Films, 1990
${CaF}_{2}$ /Si heteroepitaxy: Importance of stoichiometry, interface bonding, and lattice mismatch
Physical Review B, 1990
Scanning tunneling microscopy of insulators: CaF2 epitaxy on Si (111)
Applied Physics Letters, 1989
Molecular beam epitaxy growth of CoSi2 at room temperature
Applied Physics Letters, 1989
Crystallography of domain formation and dislocations in bilayers and multilayers
Critical Reviews in Solid State and Materials Sciences, 1989
Structure of the Si(111)-Ca $F_{2}$ Interface
Physical Review Letters, 1988
Evidence for the influence of interfacial atomic structure on electrical properties at the epitaxial ${CaF}_{2}$ /Si(111) interface
Physical Review Letters, 1988
Photoemission study of bonding at the ${CaF}_{2}$ -on-Si(111) interface
Physical Review B, 1987
Electronic structure of the ${CaF}_{2}$ /Si(111) interface
Physical Review B, 1986
Low Temperature Surface Cleaning of Silicon and Its Application to Silicon MBE
Journal of the Electrochemical Society, 1986