Dynamical study of the transferred-electron effect by a Monte Carlo technique

26 August 1971

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 7 (17) , 495-496
https://doi.org/10.1049/el:19710336

Abstract

The dynamic behaviour of transferred-electron devices is investigated by a Monte Carlo method. As an example, the frequency dependence of the efficiency, is presented for InP. The frequency behaviour of the efficiency is shown to be very sensitive to the ΓL coupling constant

Keywords

NEGATIVE DIFFERENTIAL CONDUCTIVITY
TRANSFERRED ELECTRON EFFECT
BLOCH FUNCTIONS
ITERATIVE SOLUTION
BOLTZMANN'S EQUATION
MONTE CARLO METHOD
RELAXATION EFFECTS
GUNN EFFECT
INP
GAAS
HEATING PROCESSES

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