Mechanisms of GaAs atomic layer epitaxy: a review of progress
- 1 January 1994
- journal article
- review article
- Published by Elsevier in Surface Science
- Vol. 299-300, 892-908
- https://doi.org/10.1016/0039-6028(94)90705-6
Abstract
No abstract availableKeywords
This publication has 67 references indexed in Scilit:
- Formation of ‘‘super’’ As-rich GaAs(100) surfaces by high temperature exposure to arsineApplied Physics Letters, 1992
- Atomic Layer Epitaxy of III-V Electronic MaterialsAnnual Review of Materials Science, 1991
- Pyrolysis of Trimethylgallium on (001) GaAs Surface Investigated by Surface Photo-AbsorptionJapanese Journal of Applied Physics, 1991
- Pulsed jet epitaxy of III–V compoundsJournal of Crystal Growth, 1991
- Atmospheric pressure atomic layer epitaxy: mechanisms and applicationsJournal of Crystal Growth, 1991
- The Mechanisms and Kinetics of Surface Reactions of Trimethylgallium on GaAs (001) Surfaces and Its Relevance to Atomic Layer EpitaxyMRS Proceedings, 1991
- Surface chemical processes in metal organic molecular-beam epitaxy; Ga deposition from triethylgallium on GaAs(100)Journal of Applied Physics, 1990
- From chemical vapor epitaxy to chemical beam epitaxyJournal of Crystal Growth, 1989
- Growth kinetic study in GaAs molecular layer epitaxy in TMG/AsH3 systemJournal of Crystal Growth, 1988
- : A chemisorbed structurePhysical Review B, 1983