SOS Device radiation effects and hardening

1 August 1978

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Transactions on Electron Devices

Vol. 25 (8) , 959-970
https://doi.org/10.1109/t-ed.1978.19208

Abstract

The status of radiation-hardening problems common to both C-MOS/SOS and C-MOS/Bulk and the role that the silicon-on-sapphire technology plays as a "dielectric isolation hardening process" fis briefly presented, The new radiation effects problems that are a result of implementing C-MOS technology in SOS instead of in bulk silicon are delineated and put into perspective The main emphasis is on back-channel leakage currents and the novel problerns such as hysterisis effects associated with n-channel "kink" effects, Experimental techniques utilized in identifying the unique C-MOS/SOS radiation effects problems and processing techniques utilized in solving these problems are summarized.

Keywords

This publication has 0 references indexed in Scilit: