Fluorescence X en incidence rasante: application au trace des profils d'implantation

• 1 September 1986
• journal article
• Published by International Union of Crystallography (IUCr) in Acta Crystallographica Section A Foundations of Crystallography
• Vol. 42  (5) , 304-309
• https://doi.org/10.1107/s0108767386099208

Abstract

Keywords

• RAY BEAM
• INCIDENT ANGLE
• COMPOSITION
• 0.1
• HEAVY SECONDARY
• IONIC EMISSION
• IRRADIATED LAYER
• IONIC IMPLANTATION
• SPECTRUM DEPENDS
• DEPTH Z