Optical characterization of GaAs pyramid microstructures formed by molecular beam epitaxial regrowth on pre-patterned substrates

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Abstract
Arrays of GaAs pyramids with square (001) bases of length 1-5 mum have been fabricated by molecular beam epitaxy regrowth on pre-patterned GaAs (001) substrates. The optical properties of the pyramid faces have been studied by microreflection and microtransmission imaging measurements with light (lambda =900-1000 nm) incident through the pyramid base. Digitized charge coupled device images indicate that total internal reflection occurs at the {110} pyramid facets and that their reflectivities are greater than 80%, provided overgrowth of the facets does not occur. These properties suggest that such structures may be suitable as the top mirror in novel micron-scale vertical microcavity devices. (C) 2001 American Institute of Physics.