Asymmetrical Emission Profiles from Low-Frequency Discharges in SF6 and in N2 Gases in a Planar Diode with a Si-Wafer
- 1 January 1991
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 30 (1R) , 180-181
- https://doi.org/10.1143/jjap.30.180
Abstract
Asymmetrical emission profiles were observed on such spectral lines as F I 703.7 and S II 545.4 nm from SF6 discharge, and N2 337.1 and N2 + 391.4 nm from N2 discharge. The intensity ratio of N2 + 391.4 to N2 337.1 clearly shows that the observed asymmetries originate from the asymmetrical field distribution induced by an electrically floating Si-wafer mounted on one of the two plane electrodes.Keywords
This publication has 2 references indexed in Scilit:
- Etching of Si by SF6 in a radio frequency double cathodeJournal of Vacuum Science & Technology B, 1987
- The etching of silicon in diluted SF6 plasmas: Correlation between the flux of incident species and the etching kineticsJournal of Vacuum Science & Technology B, 1987