Generalized Test Bed for High-Voltage, High-Power SiC Device Characterization
- 1 October 2006
- conference paper
- Published by Institute of Electrical and Electronics Engineers (IEEE)
- Vol. 1 (01972618) , 338-345
- https://doi.org/10.1109/ias.2006.256543
Abstract
A generalized 25 kV test bed developed to characterize high-voltage, high-power SiC devices is described. The test bed provides a high-speed (30 mus), high-voltage linear amplifier that is used as the pulsed power supply for parametric static measurements (curve tracer) and as the continuous high voltage power supply for inductive/resistive switching measurements. The test bed includes high-voltage inductors, clamping capacitors, and load modules for resistive and inductive load switching. An additional reconfigurable section of the test bed with plug-in current limiting and current sense resistors is used for parametric (curve tracer) device characterization. A flexible curve tracer software-based user interface is used to control several power supply and measurement instruments that collectively comprise a versatile pulsed curve tracer. The device under test (DUT) is mounted on a 20 kV electrically-isolated temperature-controlled heatsink. The test bed features containment of all high voltage circuits and the DUT within a clear plastic interlocked safety box. Several example measurements of SiC devices using the test bed are shownKeywords
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