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Electrical properties of nitrided-oxide systems for use in gate dielectrics and EEPROM
Home
Publications
Electrical properties of nitrided-oxide systems for use in gate dielectrics and EEPROM
Electrical properties of nitrided-oxide systems for use in gate dielectrics and EEPROM
SL
S.K. Lai
S.K. Lai
JL
J. Lee
J. Lee
VD
V.K. Dham
V.K. Dham
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1 January 1983
proceedings article
Published by
Institute of Electrical and Electronics Engineers (IEEE)
https://doi.org/10.1109/iedm.1983.190473
Abstract
No abstract available
Keywords
EPROM
CAPACITANCE
DIELECTRICS
ANNEALING
DEGRADATION
ELECTRIC FIELD
ELECTRIC RESISTANCE
RADIATION DAMAGE
BORON
Cited
Cited by 46 articles
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