The Optical Constants of Silicon and Dry Oxygen Oxides of Silicon at 5461A
- 1 June 1978
- journal article
- Published by The Electrochemical Society in Journal of the Electrochemical Society
- Vol. 125 (6) , 968-971
- https://doi.org/10.1149/1.2131600
Abstract
The index of refraction of oxides grown on silicon in dry oxygen has been found to be a function of the growth temperature. There is an orientation effect for oxides grown at low temperatures. The index decreases with temperature, saturating above 1190°C at 1.4620, a value consistent with the index of fused quartz when stress corrections are made. The apparent density of oxide grown at 800°C is 3% greater than that grown above 1190°C. The complex index of refraction of silicon at 5461Å has been determined to be 4.086 ‐ i0.031.Keywords
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