Evidence for precursor‐mediated Cl2 etching of GaAs{110}: Effect of surface temperature and incident translational energy on the reaction probability
- 1 May 1991
- journal article
- Published by American Vacuum Society in Journal of Vacuum Science & Technology A
- Vol. 9 (3) , 1732-1736
- https://doi.org/10.1116/1.577495
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