Self-consistent calculation of the enhanced donor polarizability below the insulator-metal transition
- 31 October 1979
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 32 (2) , 121-125
- https://doi.org/10.1016/0038-1098(79)91071-8
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Universality aspects of the metal-nonmetal transition in condensed mediaPhysical Review B, 1978
- Insulating side of the metal-insulator transition in doped semiconductors and the dielectric-constant enhancementPhysical Review B, 1976
- Dielectric Anomaly and the Metal-Insulator Transition in-Type SiliconPhysical Review Letters, 1975
- Polarizabilities of shallow donors in siliconSolid State Communications, 1974
- On the Herzfeld theory of metallization. Application to doped semiconductors, electron-hole liquids in semiconductors, and expanded states of simple metalsThe Journal of Chemical Physics, 1974
- Semiconductor-to-Metal Transition in-Type Group IV SemiconductorsReviews of Modern Physics, 1968
- Resistivity and hall coefficient of antimony-doped germanium at low temperaturesJournal of Physics and Chemistry of Solids, 1958
- Kopplung nichtrelativistischer teilchen mit einem quantisierten feldIl Nuovo Cimento (1869-1876), 1956
- Über die Struktur der Lösung des Mehrelektronenproblems im Festkörper und ein Theorem von BlochZeitschrift für Naturforschung A, 1954
- On Atomic Properties which make an Element a MetalPhysical Review B, 1927