Subband dispersion of holes in AlAs/In0.10Ga0.90As/AlAs strained-layer quantum wells measured by resonant magnetotunneling

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Abstract
Magnetotunneling of holes through the double‐barrier AlAs/In0.10Ga0.90As strained‐layer structure is investigated with magnetic fields up to 23 T to determine the in‐plane dispersion of the two‐dimensional subbands in the In0.10Ga0.90As quantum well. Mass reversal, nonparabolicity, anticrossing, and anisotropy are observed. The lack of electronlike dispersion in the lowest‐energy light‐hole subband is attributed to the large biaxial compressional strain in the In0.10Ga0.90As, which suppresses the mixing of heavy and light‐hole states even at finite in‐plane wave vectors.