Resistive Switching in Pt∕Al[sub 2]O[sub 3]∕TiO[sub 2]∕Ru Stacked Structures
- 1 January 2006
- journal article
- Published by The Electrochemical Society in Electrochemical and Solid-State Letters
- Vol. 9 (12) , G343-G346
- https://doi.org/10.1149/1.2353899
Abstract
The electric-pulse-induced resistive switching properties of , , , and thin films were studied by current–voltage measurements using Pt/insulator/Ru structures and conductive atomic force microscopy. The switching parameters of the film were stable, whereas those of the films show random variations during repeated - measurements. Both films show resistive switching by a filamentary switching mechanism with linear conduction behavior in the low region. The stacked film shows a bias polarity-dependent switching behavior. This suggests that the nucleation of the conducting filaments occurs at the interface where the electrons are injected.Keywords
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