Optoelectronic matrix switch using heterojunction switching photodiodes
- 19 February 1981
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 17 (4) , 150-151
- https://doi.org/10.1049/el:19810106
Abstract
Heterojunction switching photodiodes (InGaAs/InP) were used to construct a 3×3 matrix switch. Isolation and cross-talk losses were better than 63 dB over a frequency range of 10 Hz to 400 MHz and 400 Mbit/s digital signals were switched with switching times shorter than 30 ns.Keywords
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