UV Laser-Induced Radical-Etching For Microelectronic Processing
- 14 June 1984
- proceedings article
- Published by SPIE-Intl Soc Optical Eng
- Vol. 459, 121-127
- https://doi.org/10.1117/12.939446
Abstract
This paper reports work towards the development of new UV laser-induced radical-etching processes for the efficient and selective removal of: (1) polycrystalline (poly)-silicon layers deposited on silicon dioxide substrates, (2) tungsten layers deposited on either silicon or silicon dioxide substrates, and (3) silicon dioxide layers deposited on either silicon or aluminum substrates.© (1984) COPYRIGHT SPIE--The International Society for Optical Engineering. Downloading of the abstract is permitted for personal use only.Keywords
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