Tunnelling through quantum dots
- 1 November 1996
- journal article
- Published by IOP Publishing in Semiconductor Science and Technology
- Vol. 11 (11S) , 1506-1511
- https://doi.org/10.1088/0268-1242/11/11s/009
Abstract
Tunnelling through single and coupled GaAs quantum dots is used to analyse the electronic properties of artificial atoms and molecules. In addition we demonstrate that a strongly localized dot can be used as a spectrometer with high spatial and energy resolution for the determination of the local density of states in a disordered semiconductor.Keywords
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