Structural, optical and electrical characterization of amorphous SexTe1−x thin film alloys
- 31 May 2000
- journal article
- Published by Elsevier in Microelectronic Engineering
- Vol. 51-52, 677-687
- https://doi.org/10.1016/s0167-9317(99)00531-6
Abstract
No abstract availableKeywords
This publication has 13 references indexed in Scilit:
- Effect of tellurium substitution on the crystallization kinetics of amorphous seleniumJournal of Non-Crystalline Solids, 1995
- Electrical and optical studies on amorphous Se-Te alloysJournal of Physics D: Applied Physics, 1992
- The effects of As and Te on the crystallization and optical gaps of seleniumJournal of Non-Crystalline Solids, 1986
- Raman spectra of amorphous SiCSolid State Communications, 1983
- On the compositional dependence of the optical gap in amorphous semiconducting alloysJournal of Non-Crystalline Solids, 1981
- Electronic transport in Se-Te-Sb glassesPhysica Status Solidi (a), 1980
- Vibrational and Raman-scattering properties of crystallinealloysPhysical Review B, 1977
- Studies of amorphous GeSeTe alloys (I): Preparation and calorimetric observationsJournal of Non-Crystalline Solids, 1976
- Raman Effect in Selenium–Tellurium Mixed CrystalsPhysica Status Solidi (b), 1972
- Conductivity and thermoelectric power of trigonal SexTe1−x single crystalsPhysica Status Solidi (b), 1971