Metamorphic InGaAs/InAlAs quantum well structures grown on GaAs substrates for high electron mobility transistor applications

This publication has 4 references indexed in Scilit:

• High-transconductance delta-doped InAs/AlSb HFETs with ultrathin silicon-doped InAs quantum well donor layer
  IEEE Electron Device Letters, 1998
• High-performance, 0.1 μm InAlAs/InGaAs high electron mobility transistors on GaAs
  IEEE Electron Device Letters, 1996
• 50-nm self-aligned-gate pseudomorphic AlInAs/GaInAs high electron mobility transistors
  IEEE Transactions on Electron Devices, 1992
• Ultra-high speed modulation-doped field-effect transistors: a tutorial review
  Proceedings of the IEEE, 1992