Dopant incorporation in epitaxial germanium grown on Ge(100) substrates by MBE

This publication has 3 references indexed in Scilit:

• AlGaAs/Ge/GaAs heterojunction bipolar transistors grown by molecular beam epitaxy
  IEEE Electron Device Letters, 1990
• Origin and reduction of interfacial boron spikes in silicon molecular beam epitaxy
  Applied Physics Letters, 1988
• P n p GaAs/Ge/Ge phototransistor grown by molecular beam epitaxy: Implications for bipolar and hot-electron transistors
  Applied Physics Letters, 1986