High-speed high-power 1.06 μm gallium–indium-arsenide light-emitting diodes
- 17 April 1975
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 11 (8) , 157-158
- https://doi.org/10.1049/el:19750120
Abstract
The preparation of l.06μm gallium–indium-arsenide light-emitting diodes is described. Power outputs of 1 mW at 55 mA d.c. and pulsed power outputs of up to 0.5 W have been obtained. Attenuation/modulation experiments have shown 3 dB attenuation at 110 MHz. The use of such diodes in fibre-optic communication systems is suggested.Keywords
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