Microwave noise characterisation of poly-emitter bipolar junction transistors

15 April 1993

journal article
Published by Institution of Engineering and Technology (IET) in Electronics Letters

Vol. 29 (8) , 676-678
https://doi.org/10.1049/el:19930453

Abstract

The microwave noise characteristics of poly-emitter bipolar junction transistors have been evaluated in a 0.8μm silicon BiCMOS process, at frequencies between 1 and 5.6GHz, and for collector currents between 0.5 and 15mA. Using a small-signal model for the poly-emitter bipolar junction transistors, very good agreement has been obtained between measurements and calculations of both noise figure (F_MIN) against frequency, and F_MIN against collector current. It is found that F_MIN was 2.3dB at 1 GHZ and 8.3dB at 5.6GHZ for a collector current of 5mA.

Keywords

POLY-EMITTER
NOISE FIGURE
1 TO 5.6 GHZ
COLLECTOR CURRENT
BIPOLAR JUNCTION TRANSISTORS
SMALL-SIGNAL MODEL
HIGH SPEED CIRCUITS
0.8 MICRON
BICMOS PROCESS
0.5 TO 15 MA
MICROWAVE NOISE CHARACTERISTICS

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