Measurements of Electron Concentration in GaAs Using Plasma Reflection Edge
- 1 February 1967
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 6 (2)
- https://doi.org/10.1143/jjap.6.276
Abstract
No abstract availableThis publication has 4 references indexed in Scilit:
- Measurement of the Conductivity Effective Mass in Semiconductors Using Infrared ReflectionPhysical Review B, 1964
- Free Carrier Cyclotron Resonance, Faraday Rotation, and Voigt Double Refraction in Compound SemiconductorsJournal of Applied Physics, 1961
- Infrared Absorption and Electron Effective Mass in-Type Gallium ArsenidePhysical Review B, 1959
- Band structure of indium antimonideJournal of Physics and Chemistry of Solids, 1957