A trend in the energy distributions of Ga dangling-orbital surface states on GaP, GaAs and GaSb (110)
- 30 November 1978
- journal article
- Published by Elsevier in Solid State Communications
- Vol. 28 (7) , 551-554
- https://doi.org/10.1016/0038-1098(78)90487-8
Abstract
No abstract availableThis publication has 21 references indexed in Scilit:
- Valence band studies of clean and oxygen exposed GaAs(100) surfacesSurface Science, 1978
- Photoemission and band-structure studies of the GaAs(110) surfaceJournal of Vacuum Science and Technology, 1977
- Surface and interface states on GaAs(110): Effects of atomic and electronic rearrangementsJournal of Vacuum Science and Technology, 1977
- Electronic surface properties of Ga and In containing III–V compoundsJournal of Vacuum Science and Technology, 1977
- Electronic surface properties of uhv-cleaved III–V compoundsSurface Science, 1977
- Electronic structure of cleaved clean and oxygen-covered GaAs (110) surfacesPhysical Review B, 1977
- Electronic surface properties of III–V semiconductors: Excitonic effects, band-bending effects, and interactions with Au and O adsorbate layersJournal of Vacuum Science and Technology, 1976
- Synchrotron radiation studies of electronic structure and surface chemistry of GaAs, GaSb, and InPJournal of Vacuum Science and Technology, 1976
- Contact potential differences for III–V compound surfacesJournal of Vacuum Science and Technology, 1976
- Work function variations of gallium arsenide cleaved single crystalsSurface Science, 1975