Investigation of metallization schemes for high temperature devices based on silicon carbide

• 3 August 1998
• journal article
• conference paper
• Published by Springer Nature in Analytical and Bioanalytical Chemistry
• Vol. 361  (6-7) , 570-573
• https://doi.org/10.1007/s002160050951

Abstract

Keywords

• TRANSMISSION ELECTRON MICROSCOPY
• TUNGSTEN
• NITRIDE
• AUGER
• SILICON CARBIDE