Whisker Growth during Epitaxy of GaAs by Molecular Beam Epitaxy
- 1 April 1982
- journal article
- Published by IOP Publishing in Japanese Journal of Applied Physics
- Vol. 21 (4A) , L230
- https://doi.org/10.1143/jjap.21.l230
Abstract
GaAs whiskers, many of them originating from one point, were observed on GaAs epitaxial layers grown by molecular beam epitaxy. Very small pools of Ga and/or In are believed to precipitate the whiskers which grow at a relatively rapid rate. This whisker growth process is similar to the vapor-liquid-solid (VLS) growth and may not necessarily be a result of any particular substrate defect.Keywords
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