Chemical Vapor Deposition of Silicate Glasses for Use with Silicon Devices

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Abstract
Compositions synthesized include borosilicates, phosphosilicates, aluminosilicates, aluminoborosilicates, and some zinc glasses. The compositions containing aluminum or zinc were prepared by simultaneous oxidation of the hydrides and trimethyl aluminum or diethyl zinc vapor. The deposition temperatures were in the 300°–500°C range. The effects of system variables on the deposition rate and composition of borosilicate films obtained from silane, diborane, and oxygen were examined in detail. Variables investigated included carrier gas and hydride flow rates, silane/diborane and oxygen/hydride ratios, deposition time and temperature, and reactor geometry.

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