Evidence for a new type of metal-semiconductor interaction on GaSb
- 15 March 1978
- journal article
- research article
- Published by American Physical Society (APS) in Physical Review B
- Vol. 17 (6) , 2682-2684
- https://doi.org/10.1103/physrevb.17.2682
Abstract
The formation of Au-semiconductor Schottky barriers is studied using soft-x-ray photoemission spectroscopy. The Au-GaSb interface is highly nonstoichiometric due to selective removal of Sb. This nonstoichiometry results in acceptorlike states which pin the Fermi level at the interface and determine the Schottky barrier height.Keywords
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