Monte Carlo comparison of heterojunction cathode Gunn oscillators
- 29 March 1990
- journal article
- Published by Institution of Engineering and Technology (IET) in Electronics Letters
- Vol. 26 (7) , 425-427
- https://doi.org/10.1049/el:19900277
Abstract
We have performed Monte Carlo simulations to investigate the physics of heterojunction cathode Gunn oscillators. We show that a simple heterojunction cathode does not improve the device performance because the Gunn domain matures too quickly. The inclusion of a thin n+ layer at the heterojunction allows the Gunn domain to grow throughout the length of the device. This yields improved performance as was recently experimentally observed.Keywords
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