Admittance Spectroscopy of ZnO Crystals

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Abstract
To study the native center with the deep energy level in ZnO crystals, the experiment of admittance spectroscopy was performed for Au–ZnO Schottky diodes. The results agree fairly well with the theory of admittance spectroscopy, and by analysing the experimental data, the following results are obtained. The deep energy level is located at about 0.3 eV below the bottom of the conduction band. The electron-capture crosssection and the concentration of the center are found to be of the order of 10-15 c2 and 1017 cm-3, respectively.