Si-induced island formation and surface ordering on GaAs(001)-c(4×4)
- 5 June 1995
- journal article
- Published by AIP Publishing in Applied Physics Letters
- Vol. 66 (23) , 3200-3202
- https://doi.org/10.1063/1.113722
Abstract
Scanning tunneling microscopy (STM) has been used to study the deposition of Si at 400 °C onto the c(4×4) surface reconstruction of GaAs(001) surfaces grown in situ by molecular beam epitaxy (MBE). Emphasis is placed on the nucleation, island formation, and surface ordering, as a consequence of adsorption onto the c(4×4) surface. With increasing Si coverage, a series of anisotropic ‘‘needlelike’’ islands is formed. A site exchange model is proposed in which the deposited Si atoms displace the top layer As atoms of the c(4×4) structure, with the displaced As atoms forming dimers in a new top layer.Keywords
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