Submicron scaling of AlGaAs/GaAs self-aligned thin emitter heterojunction bipolar transistors (SATE-HBT) with current gain independent of emitter area

Publisher Website
Google Scholar
Abstract
A new, self-aligned process technology for AlGaAs/GaAs heterojunction bipolar transistors (HBT) has been developed, which is based upon ultrathin (100–200 Å) AlGaAs emitter layers. The thin AlGaAs emitter is used as a selective etch stop layer for contacting the p+ base layer and acts as an integral surface passivation layer which eliminates recombination currents in the extrinsic base region. This novel technology yields transistors with emitter dimensions as small as 0.3 × 4.0 µm2 and current gain values independent of emitter area.