Electroluminescence and bulk differential negative resistance inp-GaSe
- 1 October 1969
- journal article
- research article
- Published by Springer Nature in Il Nuovo Cimento B (1971-1996)
- Vol. 63 (2) , 661-669
- https://doi.org/10.1007/bf02710715
Abstract
No abstract availableKeywords
This publication has 8 references indexed in Scilit:
- Injection electroluminescence of gallium selenideIl Nuovo Cimento B (1971-1996), 1968
- Chapter 8 Electrical Properties of Nonuniform CrystalsPublished by Elsevier ,1968
- Mobility of Charge Carriers in Semiconducting Layer StructuresPhysical Review B, 1967
- Some properties of the moving high-field domain in Gunn effect devicesIEEE Transactions on Electron Devices, 1966
- The Gunn effect in polar semiconductorsIEEE Transactions on Electron Devices, 1966
- Hot electrons and negative resistance at 20°K In n-type germanium containing Au− centresJournal of Physics and Chemistry of Solids, 1965
- Specific Negative Resistance in SolidsProceedings of the Physical Society, 1963
- A bulk differential negative resistance due to electron tunnelling through an impurity potential barrierPhysics Letters, 1963