A tunneling emitter bipolar transistor

1 July 1986

journal article
Published by Institute of Electrical and Electronics Engineers (IEEE) in IEEE Electron Device Letters

Vol. 7 (7) , 416-418
https://doi.org/10.1109/EDL.1986.26421

Abstract

We propose a new device-a Tunneling Emitter Bipolar Transistor (TEBT)-where the enhancement of the emitter injection efficiency is achieved by utilizing a very large difference in the tunneling probabilities for electrons and holes in a thin doped graded AlGaAs layer. This layer is inserted between the n-type GaAs emitter and p-type GaAs base. This device should have a high emitter efficiency and low parasitic resistances.

Keywords

TUNNELING
BIPOLAR TRANSISTORS
GALLIUM ARSENIDE
CHARGE CARRIER PROCESSES
ELECTRON EMISSION
CONTACT RESISTANCE
SILICON
EFFECTIVE MASS
HETEROJUNCTION BIPOLAR TRANSISTORS
DOPING

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