Abstract
Equations are derived for the charge transferred between a metal and a dielectric by a difference of contact potential, assuming a dielectric having traps, or `self-traps', at a single energy level and no restriction on carrier density by `trap filling'. A limit to the carrier density is then set by quantum considerations, which the theory predicts will become important at a contact potential difference of 05 V for normal temperatures and dielectric thicknesses around 10−4 m. A solution for such a system is derived using only classical electrical theory and simple thermodynamics. The results are compared with measurements on six types of plastic film already reported by Davies, and satisfactory agreement is found, including the predicted limit at 05 V. In addition to the charge transferred, the theory also predicts the potential and carrier density distributions in the dielectric, and therefore the electrical conditions within a slab of dielectric (of the type described) bounded by short-circuited conducting electrodes.

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