A new method for measuring the saturation velocity of submicron CMOS transistors
- 1 April 1995
- journal article
- Published by Elsevier in Solid-State Electronics
- Vol. 38 (4) , 791-793
- https://doi.org/10.1016/0038-1101(94)00180-n
Abstract
No abstract availableThis publication has 3 references indexed in Scilit:
- Saturation transconductance of deep-submicron-channel MOSFETsSolid-State Electronics, 1993
- Gate-voltage-dependent effective channel length and series resistance of LDD MOSFET'sIEEE Transactions on Electron Devices, 1987
- The effect of high fields on MOS device and circuit performanceIEEE Transactions on Electron Devices, 1984