Nucleation and growth of diamond films on mu c-SiC/x-Si by hot-filament CVD
- 16 August 1993
- journal article
- Published by IOP Publishing in Journal of Physics: Condensed Matter
- Vol. 5 (33A) , A305-A306
- https://doi.org/10.1088/0953-8984/5/33a/107
Abstract
Using hot-filament CVD (HF-CVD) the authors succeeded in preparing polycrystalline diamond films on non-scratched crystalline silicon by depositing a very thin microcrystalline silicon carbide buffer layer. Films were characterized by AES, EELS and SEM.Keywords
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